[Sneap] High-energy implant on 150mm silicon wafers

[Howard Evans]

Blatant commercial response to Douglas Young:

Using our 1.7 MV IonX tandem accelerator with NEC SNICS-II ion source,
UES, Inc. can implant a 100 mm diameter circular area in the middle of a
150 mm silicon wafer. Our end-station will accept six 150 mm wafers per
load cycle. The energy range and ion species you requested are
acceptable. Cost depends on dose and number of wafers implanted.

We also implant 100 mm (4-inch) wafers, normally 12 per load cycle, but
end-station will hold 25 wafers.

Howard B. Evans, Jr.
Engineer, Surface Engineering Lab

937-426-6900 ext. 116
937-426-5718 fax
937-367-5159 cell

UES, Inc.
4401 Dayton-Xenia Road
Dayton OH  45432-1894

http://www.ues.com


-----Original Message-----
From: sneap-bounces at tunl.duke.edu [mailto:sneap-bounces at tunl.duke.edu]
On Behalf Of Young, Douglas
Sent: Wednesday, May 27, 2009 7:37 AM
To: sneap at tunl.duke.edu
Subject: [Sneap] High-energy implant on 150mm silicon wafers




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